Séminaire, Dr. Ke LI, Université de Nottingham (Royaume-Uni), 22 mai 2026

Wide bandgap (SiC/GaN) power semiconductor devices :
state of the art and their applications for sustainable development

IUT de Lille – Villeneuve d’Ascq – amphi 1A06
vendredi 22/05, 10h15
Dr. Ke LI – Université de Nottingham (Royaume-Uni)

Abstract
This presentation will introduce emerging wide bandgap semiconductor devices and
their applications in power electronics converters. The audience will gain an understanding of the
fundamental characteristics of these devices, together with the benefits and challenges associated
with their adoption in modern power electronic energy conversion systems. In addition, several
ongoing cutting-edge research projects will be presented to provide insights into the latest
academic research and industrial applications in this field and their contribution to sustainable
development.

Dr Ke Li is an Associate Professor at the Power Electronics, Machines and Control
(PEMC) Research Institute at the University of Nottingham, UK. He received the PhD degree in
Electrical Engineering from the University of Lille, France, in 2014. His research interests focus on
the integration and reliability of modern power electronics systems. Dr Li has authored and co-
authored more than 60 journal and conference publications in these fields. He is actively involved
in the professional community through service roles within both IEEE and IET, and served as the
Conference Chair of the PEMD 2024 Conference.