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The onset and pinch-off voltages shift of lateral GaN field-effect rectifier diodes (L-FER) and normally-off HEMTs are studied. It is shown that a short duration of low power SF6 plasma followed by a low temperature annealing permits to get an effective and stabilized fluorine ions deposition on the AlGaN barrier, contributing to reduce the back shift of both devices threshold voltages.

This work proposes the electrothermal modeling of a packaged GaN power transistor in order to evaluate by simulation its performances in a 200 W – 1 MHz DC/DC converter. The complete electrical modeling of the high frequency converter using EM-circuit co-simulations is presented. After validation of the GaN transistor switchings waveforms and estimation of power losses, the operating temperature of the device is simulated and experimentally validated.