Fiche individuelle
Xuyang LU | ||
Titre | Doctorant | |
Equipe | Electronique de Puissance | |
Adresse | Université de LILLE Avenue Paul langevin 59655 VILLENEUVE-D'ASCQ | |
Téléphone | +33 (0)3 62 26 84 72 | |
xuyang.lu.etu@univ-lille.fr | ||
Observation / Thématique de recherche | Wide-bandgap power semiconductor devices and power converters | |
Publications |
ACT Conférence internationale avec acte |
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[1] Investigation on Single and Split Output Gate Configurations Influence on the GaN-HEMTs Switching Behaviours 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), Aalborg, Denmark, pages. 9, 09/2023, URL, Abstract LU Xuyang, VIDET Arnaud, IDIR Nadir, MARSIC Vlad, IGIC Petar, FARAMEHR Soroush |
This work investigates the power GaN-HEMTs switching behaviour differences resulted from usage of two gate driving configurations: single and split outputs. The analysis based on simulation and experimental results show that GaN-HEMTs could switch slower and cause higher switching losses when the split output configuration is used. This is because the output capacitance (Coss) of MOSFETs inside gate driver will be charged during the turn-on process of GaN-HEMTs, and this charging process can reduce the charging speed of input capacitance (Ciss) of GaN-HEMTs. Moreover, the gate resistance and parasitic inductance are the main parameters selected for analysis, and their distribution can amplify this effect by increasing the impedance ratio of turn-on and turn-off loop. This research provides guiding suggestions for gate driver and high-efficiency GaN-HEMTs power module design. |
[2] Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id−Vds Characteristics in Saturation Region 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), Hanover, Germany, pages. 9, 09/2022, URL, Abstract LU Xuyang, VIDET Arnaud, LI Ke, FARAMEHR Soroush, IGIC Petar, IDIR Nadir |
A new method is proposed in this paper to investigate the influence of current collapse effect on the Id−Vds characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge circuit. The measured Id−Vds characteristics with and without the Vds bias are compared, which shows the effect of charge trapping due to the Vds bias on device Id−Vds characteristics in saturation region. These data will be used for a device model including the current collapse effect in full Id−Vds region. |
AP Autre publication |
[1] Measurement of Id-Vds characteristics of GaN-HEMTs in High Voltage Region Based on Double-pulse Test Centre for Power Electronics (CPE) Annual Conference, UK, 07/2022 LU Xuyang, VIDET Arnaud, LI Ke, FARAMEHR Soroush, IGIC Petar, IDIR Nadir |
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