ACT Conférence internationale avec acte |
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[1] Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id−Vds Characteristics in Saturation Region
24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), Hanover, Germany, pages. 9, 09/2022, URL, Abstract
LU Xuyang, VIDET Arnaud, LI Ke, FARAMEHR Soroush, IGIC Petar, IDIR Nadir |
A new method is proposed in this paper to investigate the influence of current collapse effect on the Id−Vds characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge circuit. The measured Id−Vds characteristics with and without the Vds bias are compared, which shows the effect of charge trapping due to the Vds bias on device Id−Vds characteristics in saturation region. These data will be used for a device model including the current collapse effect in full Id−Vds region. |
AP Autre publication |
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[1] Measurement of Id-Vds characteristics of GaN-HEMTs in High Voltage Region Based on Double-pulse Test
Centre for Power Electronics (CPE) Annual Conference, UK, 07/2022
LU Xuyang, VIDET Arnaud, LI Ke, FARAMEHR Soroush, IGIC Petar, IDIR Nadir |
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