{"id":5953,"date":"2019-10-25T00:01:49","date_gmt":"2019-10-24T23:01:49","guid":{"rendered":"https:\/\/l2ep.univ-lille.fr\/?p=5953"},"modified":"2019-10-25T08:47:54","modified_gmt":"2019-10-25T07:47:54","slug":"soutenance-de-these-loris-pace-25-nov-2019","status":"publish","type":"post","link":"https:\/\/l2ep.univ-lille.fr\/en\/soutenance-de-these-loris-pace-25-nov-2019\/","title":{"rendered":"Soutenance de Th\u00e8se, Loris PACE, 25 Nov. 2019"},"content":{"rendered":"<p style=\"text-align: center;\"><strong><span style=\"font-size: medium; color: #f07e1c;\">Caract\u00e9risation et mod\u00e9lisation de composants GaN pour la conception des convertisseurs statiques haute fr\u00e9quence<\/span><\/strong><\/p>\n<p style=\"text-align: center;\"><strong><span style=\"color: #f07e1c;\">Date :<\/span><\/strong> Lundi 25 novembre 2019, 10h<br \/>\n<strong><span style=\"color: #f07e1c;\">Lieu :<\/span><\/strong> B\u00e2t. ESPRIT, Atrium<\/p>\n<p><strong><span style=\"color: #f07e1c;\">Resume<\/span><\/strong><\/p>\n<p style=\"text-align: justify;\">La mont\u00e9e en fr\u00e9quence de commutation des transistors de puissance \u00e0 base de Nitrure de Gallium\u00a0(GaN) pr\u00e9sente une avanc\u00e9e technologique conduisant \u00e0 la r\u00e9duction de la taille, du poids et du\u00a0volume des syst\u00e8mes de conversion de l\u2019\u00e9nergie. En effet, les propri\u00e9t\u00e9s physiques des transistors de\u00a0type HEMT bas\u00e9s sur l\u2019h\u00e9t\u00e9rostructure AlGaN\/GaN pr\u00e9sentent un fort potentiel pour le\u00a0d\u00e9veloppement de convertisseurs statiques haute fr\u00e9quence. Avec l\u2019augmentation toujours croissante\u00a0de la part de l\u2019\u00e9lectronique de puissance dans les syst\u00e8mes \u00e9lectriques actuels, cette fili\u00e8re\u00a0technologique, associ\u00e9e \u00e0 la fili\u00e8re du Carbure de Silicium (SiC), vise aujourd\u2019hui \u00e0 remplacer les\u00a0composants de puissance \u00e0 base de Silicium (Si) notamment pour des raisons de tension de claquage\u00a0\u00e9lev\u00e9e, de robustesse vis-\u00e0-vis des conditions s\u00e9v\u00e8res de fonctionnement et d\u2019int\u00e9gration de puissance.\u00a0La conception optimale des convertisseurs haute fr\u00e9quence implique une connaissance pr\u00e9cise du\u00a0fonctionnement des composants de puissance au sein de ces syst\u00e8mes. Ainsi, la conception de ces\u00a0dispositifs repose sur des \u00e9tapes d\u2019analyse et de simulations men\u00e9es \u00e0 partir des mod\u00e8les des semiconducteurs de puissance et des \u00e9l\u00e9ments environnants. L\u2019objectif de ce travail de th\u00e8se est de\u00a0proposer une m\u00e9thodologie de mod\u00e9lisation comportementale de transistors de puissance GaN en\u00a0boitier bas\u00e9e exclusivement sur des m\u00e9thodes de caract\u00e9risation non-intrusives.\u00a0Les techniques de caract\u00e9risation \u00e9lectriques utilis\u00e9es pour la mod\u00e9lisation de transistors fonctionnant\u00a0en gammes radiofr\u00e9quences, telles que la mesure des param\u00e8tres S ou les mesures courant\/tension en\u00a0r\u00e9gime puls\u00e9, sont ici adapt\u00e9es \u00e0 la caract\u00e9risation du transistor de puissance GaN encapsul\u00e9. A partir\u00a0des r\u00e9sultats de caract\u00e9risation, les diff\u00e9rents \u00e9l\u00e9ments lin\u00e9aires et non lin\u00e9aires du mod\u00e8le \u00e9lectrique\u00a0du transistor sont obtenus et un mod\u00e8le \u00e9lectrique complet rassemblant ces \u00e9l\u00e9ments est impl\u00e9ment\u00e9\u00a0dans le logiciel de simulation ADS. Un banc de test Double Pulse est alors con\u00e7u afin de mettre en\u00a0application le mod\u00e8le \u00e9lectrique d\u00e9velopp\u00e9. Apr\u00e8s mod\u00e9lisation de l\u2019environnement du transistor, y\u00a0compris du circuit imprim\u00e9, les r\u00e9sultats de simulation des formes d\u2019onde de commutation sont\u00a0confront\u00e9s aux r\u00e9sultats exp\u00e9rimentaux.\u00a0Afin de tenir compte des effets de la temp\u00e9rature sur le fonctionnement du transistor, une\u00a0m\u00e9thodologie est propos\u00e9e permettant d\u2019obtenir le mod\u00e8le thermique du composant \u00e0 partir de\u00a0mesures de puissance dissip\u00e9e et d\u2019une proc\u00e9dure d\u2019optimisation. \u00c0 partir du mod\u00e8le obtenu, un\u00a0convertisseur DC\/DC utilisant le transistor GaN mod\u00e9lis\u00e9 a \u00e9t\u00e9 con\u00e7u et r\u00e9alis\u00e9. Les r\u00e9sultats de\u00a0simulation des formes d\u2019onde de commutation sont confront\u00e9s aux r\u00e9sultats exp\u00e9rimentaux pour diff\u00e9rentes temp\u00e9ratures de fonctionnement du transistor et une pr\u00e9diction du fonctionnement en\u00a0continu du convertisseur est r\u00e9alis\u00e9e.<\/p>\n<p><strong><span style=\"color: #f07e1c;\">Abstract<\/span><\/strong><\/p>\n<p style=\"text-align: justify;\">The high frequency operation of GaN power transistors is of great interest in order to reduce size, weight and volume of power converters. Indeed, GaN HEMT power transistors show very good physical properties for the development of high frequency power converters. Within the constant rise of the amount of power electronics in electrical systems, the GaN technology, associated with the Silicon Carbide (SiC) one, aims to replace the Silicium (Si) power devices especially in terms of robustness in harsh conditions and of power integration. The optimal design of high frequency power converters involves an accurate knowledge of power devices operations in the systems. Therefore, before the fabrication of converters, simulations steps based on semi-conductor and surrounding elements models are required. This research work focuses on the development of a modeling methodology of packaged GaN power transistors, exclusively based on non-intrusive characterization techniques. In this work, electrical characterization techniques used for radiofrequency transistors modeling, such as S-parameters and pulsed current\/voltage measurements, are adapted to characterize the packaged GaN power transistor. Based on the characterization results, linear and nonlinear elements of the transistor\u2019s electrical equivalent circuit are determined and a complet electrical model of the device is implemented in the ADS software. A Double Pulse test bench is made in order to apply the developed electrical model. After having modeled the whole test bench, including the printed circuit board, simulation results of the switching waveforms are compared to experimental results. Considering the effects of transistor\u2019s temperature on its operation in power converters, a methodology is proposed to extract the thermal model of the device using dissipated power measurements and an optimization procedure. The obtained thermal circuit and its influence of thermal-dependent elements are added to the previous electrical model in order to build the complete electro-thermal model of the GaN power transistor. Based on the developed model, a DC to DC converter using the studied transistor has been designed and fabricated. Then, the simulation results are compared to experimental results for several operating temperatures and a prediction of the continuous operation of the converter is achieved.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Caract\u00e9risation et mod\u00e9lisation de composants GaN pour la conception des convertisseurs statiques haute fr\u00e9quence Date : Lundi 25 novembre 2019, 10h Lieu : B\u00e2t. ESPRIT, Atrium Resume La mont\u00e9e en fr\u00e9quence de commutation des transistors de puissance \u00e0 base de Nitrure de Gallium\u00a0(GaN) pr\u00e9sente une avanc\u00e9e technologique conduisant \u00e0 la r\u00e9duction de la taille, du [&hellip;]<\/p>\n","protected":false},"author":8,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":[],"categories":[16,3],"tags":[],"_links":{"self":[{"href":"https:\/\/l2ep.univ-lille.fr\/en\/wp-json\/wp\/v2\/posts\/5953"}],"collection":[{"href":"https:\/\/l2ep.univ-lille.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/l2ep.univ-lille.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/l2ep.univ-lille.fr\/en\/wp-json\/wp\/v2\/users\/8"}],"replies":[{"embeddable":true,"href":"https:\/\/l2ep.univ-lille.fr\/en\/wp-json\/wp\/v2\/comments?post=5953"}],"version-history":[{"count":4,"href":"https:\/\/l2ep.univ-lille.fr\/en\/wp-json\/wp\/v2\/posts\/5953\/revisions"}],"predecessor-version":[{"id":5960,"href":"https:\/\/l2ep.univ-lille.fr\/en\/wp-json\/wp\/v2\/posts\/5953\/revisions\/5960"}],"wp:attachment":[{"href":"https:\/\/l2ep.univ-lille.fr\/en\/wp-json\/wp\/v2\/media?parent=5953"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/l2ep.univ-lille.fr\/en\/wp-json\/wp\/v2\/categories?post=5953"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/l2ep.univ-lille.fr\/en\/wp-json\/wp\/v2\/tags?post=5953"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}